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M.2 NVMe SSD 512GB GOODRAM IRDM PRO NANO, Designed for handheld consoles, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2230 form factor, Sequential Reads/Writes 5100 MB/s / 4600 MB/s, Random 4K Reads/Writes: 780K IOPS / 920K IOPS, TBW: 300TB, MTBF: 1.5mln hou
M.2 NVMe SSD 512GB GOODRAM IRDM PRO NANO, Designed for handheld consoles, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2230 form factor, Sequential Reads/Writes 5100 MB/s / 4600 MB/s, Random 4K Reads/Writes: 780K IOPS / 920K IOPS, TBW: 300TB, MTBF: 1.5mln hou
Код товара 223451784
1 459 лей
1 599 лей
Интерфейс ЭлектроникаPCI-E
Все характеристики
Самовывоз со склада
12.07 - 14.07
Отделение Nova Posta
13.07 - 15.07
бесплатно
Доставка по Кишиневу
12.07 - 14.07
65 лей
Доставка по Молдове
13.07 - 15.07
65 лей
Мобильный Pickup Point
17.07
бесплатно
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Описание
Характеристики
Интерфейс ЭлектроникаPCI-E
CaracteristiciTBW: 1200TB, MTBF: 1.5mln hours, Over Provision, ECC, TRIM
ModelIRDM PRO NANO
Part NumberIRP-SSDPR-P44N-512-30
Dimensiuni, Greutate22 x 30 x 2.2 mm
Form-factorM.2 2230
InterfetePCIe4.0 x4 / NVMe1.4
Producator GOODRAM
Tipul celulelor de memorie3D NAND TLC
Tipul dispozitivuluiSSD
Viteza de citire5100 MB/s
Viteza de citire aleatorie780,000 IOPS
Viteza de inscriere4600 MB/s
Viteza de inscriere aleatorie920,000 IOPS
Volumul unitatii de stocare512 GB
Документация
M.2 NVMe SSD 512GB GOODRAM IRDM PRO NANO, Designed for handheld consoles, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2230 form factor, Sequential Reads/Writes 5100 MB/s / 4600 MB/s, Random 4K Reads/Writes: 780K IOPS / 920K IOPS, TBW: 300TB, MTBF: 1.5mln houM.2 NVMe SSD 512GB GOODRAM IRDM PRO NANO, Designed for handheld consoles, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2230 form factor, Sequential Reads/Writes 5100 MB/s / 4600 MB/s, Random 4K Reads/Writes: 780K IOPS / 920K IOPS, TBW: 300TB, MTBF: 1.5mln hou223451784223451784
5285
5285
